Project Consortium

iPC Consotium Group Picture

Welcome to AddMorePower

The AddMorePower consortium consists of ten highly qualified partners from six countries (Germany, Austria, France, Czech Republic, Belgium and Sweden). Among them are four highly innovative research centers, a large internationally recognized industry partner for material- and component production, industrial competence center, two large research-based universities and two highly skilled multicultural SMEs.

Contact

Project Coordinator
Dr. André Clausner
Fraunhofer
Germany

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Coordination Support
Patrick Leczek
Technikon
Austria

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Video

Blog

24 September, 2026

ESYMS 2026 – European School for Young Materials Scientists

🎓 AddMorePower is pleased to announce the ESYMS 2026 – European School for Young Materials Scientists, organized by André Clausner (Fraunhofer IKTS), taking place from 23-24 November 2026 in Dresden/Germany. The event aims to bring together young scientists, mainly PhD...
11 September, 2026

AddMorePower represented at GaN Marathon

From 7-10 June 2026 the GaN Marathon took place in Florence, Italy. AddMorePower was represented by partner ESRF – European Synchrotron Radiation Facility. Agnieszka Corley-Wiciak gave a presentation on “Operando and multimodal X-ray microscopy of strain and electromechanical coupling in...

Events

December

17

2026

AddMorePower Public Advisory Board Meeting

@Location:

online 
Info
We are delighted to invite you to the AddMorePower Public Advisory Board Meeting. Join us and register now.

November

23 - 24

2026

ESYMS 2026 – European School for Young Materials Scientists

@Location:

Dresden, Germany
Info
🎓 AddMorePower is pleased to announce the ESYMS 2026 – European School for Young Materials Scientists, organized by André Clausner (Fraunhofer IKTS), taking place from 23-24 November 2026 in Dresden/Germany.

November

08 - 13

2026

International Workshop on Nitride Semiconductors 2026

@Location:

Kumamoto, Japan
Info
ESRF and KAI will do a presentation on leakage spot generation observed in (Al)GaN during HTRB stressing by XBIC and imaging and identification of structural defects in SiC by RCI.

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