Project Consortium

iPC Consotium Group Picture

Welcome to AddMorePower

The AddMorePower consortium consists of ten highly qualified partners from six countries (Germany, Austria, France, Czech Republic, Belgium and Sweden). Among them are four highly innovative research centers, a large internationally recognized industry partner for material- and component production, industrial competence center, two large research-based universities and two highly skilled multicultural SMEs.

Contact

Project Coordinator
Dr. André Clausner
Fraunhofer
Germany

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Coordination Support
Patrick Leczek
Technikon
Austria

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Video

Blog

22 October, 2026

Summer School: Multiphysics Material Modeling

The “Summer School on Multiphysics Material Modeling” took place on 9-12 September at KU Leuven. This event was targeting researchers working on diverse topics such as power semiconductors (AddMorePower), hydrogen embrittlement (HyWay) and battery materials (FULL-MAP). Besides the scientific content,...
14 October, 2026

Newsletter Issue #5 is out!

We are excited to share the latest updates from the AddMorePower project in our newly released Newsletter Issue #5. This edition highlights recent project achievements, key developments, and ongoing activities across the consortium. We also look back on our partners’...

Events

December

17

2026

AddMorePower Public Advisory Board Meeting

@Location:

online 
Info
We are delighted to invite you to the AddMorePower Public Advisory Board Meeting. Join us and register now.

November

23 - 24

2026

ESYMS 2026 – European School for Young Materials Scientists

@Location:

Dresden, Germany
Info
🎓 AddMorePower is pleased to announce the ESYMS 2026 – European School for Young Materials Scientists, organized by André Clausner (Fraunhofer IKTS), taking place from 23-24 November 2026 in Dresden/Germany.

November

08 - 13

2026

International Workshop on Nitride Semiconductors 2026

@Location:

Kumamoto, Japan
Info
ESRF and KAI will do a presentation on leakage spot generation observed in (Al)GaN during HTRB stressing by XBIC and imaging and identification of structural defects in SiC by RCI.

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